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| 2SK3446 Silicon N Channel Power MOS FET Power Switching ADE-208-1566F (Z) 7th. Edition Jan. 2003 Features * Capable of 2.5 V gate drive * Low drive current * Low on-resistance * RDS(on)=1.5 typ. (at VGS = 4 V) Outline TO-92MOD. D G 3 S 2 1 1. Source 2. Drain 3. Gate 2SK3446 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1 % 2. Value at Ta = 25C Symbol VDSS VGSS ID ID(pulse) IDR Pch Tch Tstg Note2 Note1 Ratings 150 10 1 4 1 0.9 150 -55 to +150 Unit V V A A A W C C Rev.6, Jan. 2003, page 2 of 10 2SK3446 Electrical Characteristics (Ta = 25C) Item Symbol Min 150 10 -- -- 0.5 -- -- 0.8 -- -- -- -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 1.5 1.9 1.4 98 31 14 3.5 0.5 1.8 8 12 34 19 1.0 60 Max -- -- 10 1 1.5 1.95 2.5 -- -- -- -- -- -- -- -- -- -- -- 1.5 -- Unit V V A A V S pF pF pF nC nC nC ns ns ns ns V ns IF = 1 A, VGS = 0 Note3 Test Conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 8 V, VDS = 0 VDS = 150 V, VGS = 0 VDS = 10 V, I D = 1 mA ID = 0.5 A, VGS = 4 V Note3 Note3 Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDF ID = 0.5 A, VGS = 2.5 V ID = 0.5 A, VDS = 10 V VDS = 10 V VGS = 0 f = 1 MHz VDD = 100 V VGS = 4 V ID = 1 A VGS = 4 V, ID = 0.5 A RL = 60 Note3 Body-drain diode reverse recovery trr time Notes: 3. Pulse test IF = 1 A, VGS = 0 diF/ dt =100 A/s Rev.6, Jan. 2003, page 3 of 10 2SK3446 Main Characteristics Power vs. Temperature Derating 1.6 Pch (W) I D (A) Maximum Safe Operation Area 10 3 1 0.3 0.1 0.03 Operation in 0.01 limited by RDS(on) 0.003 Ta = 25C this area is DC 10 PW s 1.2 = 10 100 s 1 ms Channel Dissipation Drain Current m s 0.8 O pe (1 ra sh tio ot ) n 0.4 0 50 100 150 200 Ambient Temperature Ta (C) 0.001 0.1 0.3 1 3 10 30 100 500 Drain to Source Voltage VDS (V) Typical Output Characteristics 2.5 Pulse Test Drain Current I D (A) (A) Typical Transfer Characteristics 5 V DS = 10 V Pulse Test 4 Tc = -25C 25C 75C 2 4V 3V 2.5 V 1.5 2V ID Drain current 3 1 VGS = 1.5 V 2 0.5 1 0 2 4 6 Drain to Source voltage 10 8 V DS (V) 0 2 4 6 8 10 Gate to Source Voltage VGS (V) Rev.6, Jan. 2003, page 4 of 10 2SK3446 Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage VDS(on) (V) 3 Pulse Test Drain to Source on State Resistance RDS(on) () Static Drain to Source on State Resistance vs. Drain Current 10 Pulse Test 5 2 1 0.5 VGS = 2.5 V 4V 2 ID=1A 1 0.5 A 0.2 A 0 0 2 4 6 8 10 0.2 0.1 0.1 0.3 1 3 I D (A) 10 Gate to Source Voltage VGS (V) Drain Current Static Drain to Source on State Resistance RDS(on) () Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance vs. Temperature 5 Pulse Test 4 0.2 A 0.5 A ID=1A Forward Transfer Admittance vs. Drain Current 10 3 Tc = -25C 1 0.3 0.1 0.03 0.01 0.01 0.03 V DS = 10 V Pulse Test 0.1 0.3 1 3 10 25C 75C 3 VGS = 2.5 V 2 0.2 A 0.5 A ID = 1 A 1 0 -25 VGS = 4 V 0 25 50 75 100 125 150 Tc (C) Case Temperature Drain Current I D (A) Rev.6, Jan. 2003, page 5 of 10 2SK3446 Body-Drain Diode Reverse Recovery Time 1000 Reverse Recovery Time trr (ns) Capacitance C (pF) Typical Capacitance vs. Drain Source Voltage 1000 300 100 30 Coss 10 Crss 3 1 Ciss 300 100 30 10 3 1 0.1 di / dt = 100 A / s V GS = 0, Ta = 25C VGS = 0 f = 1 MHz 0 10 20 30 40 50 0.3 1 3 I DR (A) 10 Reverse Drain Current Drain Source Voltage V DS (V) Dynamic Input Characteristics V DS (V) Switching Characteristics V GS (V) 160 ID = 1 A 120 V DS 80 VDD = 100 V 50 V 25 V 8 100 t d(off) Switching Time t (ns) 6 30 tf 10 t d(on) 3 V GS = 4 V, VDD = 30 V PW = 5 s, duty < 1 % 0.3 1 Drain Current 3 I D (A) 10 tr Drain to Source Voltage 4 V GS 2 40 VDD = 100 V 50 V 25 V 2 4 6 8 Gate Charge Qg (nC) Gate to Source Voltage 0 0 10 1 0.1 Rev.6, Jan. 2003, page 6 of 10 2SK3446 Reverse Drain Current vs. Source to Drain Voltage 4 Gate to Source Voltage vs. Temperature 1.5 Reverse Drain Current IDR (A) 3 Gate to Source Voltage VGS (V) VDS = 10 V Pulse Test ID = 10 mA 1.0 2 5V 0.5 1 mA 1 V GS = 0, -5 V Pulse Test 0 1 Source to Drain Voltage VSDF (V) 2 0.1 mA 0 -25 0 25 50 75 100 125 150 Tc (C) Case Temperature Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance s (t) 10 1 D=1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 ch - a(t) = s (t) * ch - a ch - a = 139C/W, Ta = 25C PDM D= PW T PW T o 1sh t pu lse 0.01 10 100 1m 10 m 100 m 1 10 Pulse Width PW (s) 100 1000 10000 Rev.6, Jan. 2003, page 7 of 10 2SK3446 Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 4V 50 V DD = 30 V Vout 10% 10% 90% td(on) tr 90% td(off) tf 10% Vout Monitor Waveform 90% Rev.6, Jan. 2003, page 8 of 10 2SK3446 Package Dimensions As of July, 2002 Unit: mm 4.8 0.4 3.8 0.4 0.65 0.1 0.75 Max 0.55 Max 0.7 2.3 Max 0.60 Max 10.1 Min 8.0 0.5 0.5 Max 1.27 2.54 Hitachi Code JEDEC JEITA Mass (reference value) TO-92 Mod -- Conforms 0.35 g Rev.6, Jan. 2003, page 9 of 10 2SK3446 Disclaimer 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Sales Offices Hitachi, Ltd. Semiconductor & Integrated Circuits Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: (03) 3270-2111 Fax: (03) 3270-5109 URL http://www.hitachisemiconductor.com/ For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe Ltd. Electronic Components Group Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Europe GmbH Electronic Components Group Dornacher Str 3 D-85622 Feldkirchen Postfach 201, D-85619 Feldkirchen Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00 Singapore 049318 Tel : <65>-6538-6533/6538-8577 Fax : <65>-6538-6933/6538-3877 URL : http://semiconductor.hitachi.com.sg Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road Hung-Kuo Building Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://semiconductor.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel : <852>-2735-9218 Fax : <852>-2730-0281 URL : http://semiconductor.hitachi.com.hk Copyright (c) Hitachi, Ltd., 2003. All rights reserved. Printed in Japan. Colophon 7.0 Rev.6, Jan. 2003, page 10 of 10 |
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